• Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias, H. Li, T. P. Chen, C. Chang, H. H. Cheng, Guo-En Chang, and K. M. Hung, Appl. Phys. Lett. 108, 063106 (2016). 

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• On the Potential Application of the Wrinkled SiGe/SiGe Nanofilms, Alexander I. Fedorchenk, Henry H. Cheng, Wei-Chih Wang, World Journal of Mechanics,  2016, 6, 19-23.

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• Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate, C. Chang, H. Li, S. -H. Huang, L. -C. Lin, and H. -H. Cheng, Jpn. J. Appl. Phys. 55, 04EH03 (2016).

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• Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination, C. Chang, H. Li, S. H. Huang, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 108, 151101 (2016).

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• Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy, H. Li, C. Chang, H. H. Cheng, G. Sun, and R. A. Soref, Appl. Phys. Lett. 108, 191111 (2016).

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• Ge0.975Sn0.025 320 × 256 imager chip for 1.6 to 1.9 μm infrared vision, Chiao Chang, Hui Li, Chien-Te Ku, Shih-Guo Yang, Hung Hsiang Cheng, Joshua Hendrickson, Richard A. Soref, Greg Sun, Applied Optics. 55(36):10170 · December 2016.

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• X-ray Diffraction Simulation of GeSn/Ge Multi-quantum Wells with Kinematic Approach, Hui Li, Chiao Chang, and Hung-Hsiang Cheng, Journal of Crystal Growth 468 (2017) 272–274.

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• Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer, Optics Letters Vol 42. No. 9, 1652-1655, (2017).

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• Spectroscopic ellipsometry and X-ray diffraction studies on Si1-xGex/Si epifilms and superlattices Deng Xiea, Zhi. Ren Qiub, Lingyu Wan, Devki N. Talwar, Hung-Hsiang Cheng, Shiyuan Liu, Ting Mei, Zhe Chuan Feng, Applied Surface Science.

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• Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn Li. Sian. Jheng, Hui. Li, Chiao. Chang, Hung. Hsiang. Cheng, and Liang. Chen. Li, AIP ADVANCES 7, 095324 (2017).

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• ​Room-temperature 2-um GeSn P-I-N homojunction light-emitting diode for inplane coupling to group-IV waveguides. Chiao Chang, Tai-Wei Chang, Hui Li, Hung Hsiang Cheng, Richard Soref, Greg Sun, and Joshua R. Hendrickson, Appl. Phys. Lett. 111, 141105 (2017).

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